Preface |
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xiii | |
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1 | (4) |
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4 | (1) |
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2. Anisotropic wet chemical etching |
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5 | (64) |
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5 | (2) |
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2.2 Mechanical properties of single crystalline silicon |
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7 | (2) |
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2.3 Crystallographic properties of silicon |
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9 | (2) |
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11 | (5) |
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16 | (7) |
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16 | (2) |
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18 | (5) |
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2.6 Phenomenological properties of anisotropic etching solutions |
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23 | (9) |
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23 | (1) |
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24 | (3) |
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27 | (1) |
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28 | (4) |
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2.7 Micromachining of (100)-and (110)-oriented silicon wafers |
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32 | (4) |
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2.7.1 Micromachining (001)-oriented wafers |
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32 | (3) |
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2.7.2 Micromachining (110)-oriented wafers |
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35 | (1) |
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36 | (15) |
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36 | (2) |
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38 | (5) |
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43 | (4) |
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47 | (2) |
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2.8.5 Electrochemical etch stop |
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49 | (2) |
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51 | (228) |
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51 | (1) |
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52 | (1) |
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52 | (2) |
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54 | (9) |
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54 | (1) |
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2.10.2 Fast-etching planes |
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55 | (2) |
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2.10.3 Mask designs for corner compensation |
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57 | (4) |
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61 | (2) |
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63 | (3) |
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2.11.1 Laser assisted etching |
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63 | (1) |
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2.11.2 Backside protection |
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64 | (2) |
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66 | (3) |
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3. Chemical physics of wet chemical etching |
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69 | (33) |
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69 | (2) |
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3.2 Crystallography revisited: Atomic structure of surfaces |
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71 | (5) |
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3.3 Surface free energy and step free energy |
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76 | (1) |
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77 | (6) |
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77 | (4) |
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3.4.2 Chemical potential difference |
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81 | (1) |
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3.4.3 The roughening transition |
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81 | (2) |
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83 | (6) |
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3.5.1 Nucleation of etch pits |
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83 | (3) |
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3.5.2 Etch pits formed by screw dislocations |
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86 | (2) |
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88 | (1) |
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89 | (6) |
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3.6.1 Close to the etch rate minimum |
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89 | (1) |
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3.6.2 Form of the minimum |
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90 | (5) |
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3.7 Direct evidence for steps |
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95 | (3) |
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98 | (1) |
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99 | (3) |
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102 | (21) |
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102 | (1) |
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4.2 Silicon fusion bonding |
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102 | (9) |
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4.2.1 Description of the process |
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103 | (2) |
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4.2.2 Mechanism of fusion bonding |
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105 | (3) |
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4.2.3 Effect of wafer surface imperfections |
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108 | (2) |
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4.2.4 Bonding of hydrophobic wafers |
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110 | (1) |
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4.2.5 Silicon fusion bonding after chemical mechanical polishing |
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111 | (1) |
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111 | (6) |
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4.3.1 Anodic bonding of a silicon wafer to a Pyrex wafer |
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112 | (3) |
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4.3.2 Anodic bonding using a sputtered thin film of Pyrex |
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115 | (2) |
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4.4 Low-temperature bonding |
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117 | (4) |
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121 | (2) |
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5. Examples and applications |
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123 | (28) |
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123 | (1) |
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123 | (14) |
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123 | (9) |
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5.2.2 Miniature microphones |
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132 | (2) |
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5.2.3 Application of membranes in micro liquid handling devices |
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134 | (3) |
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137 | (11) |
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148 | (3) |
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6. Surface micromachining |
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151 | (30) |
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151 | (1) |
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6.2 Basic fabrication issues for surface micromachining |
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151 | (9) |
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152 | (1) |
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6.2.2 Properties of thin film materials |
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153 | (4) |
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6.2.3 Sacrificial layer etching in HF solutions |
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157 | (1) |
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158 | (2) |
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160 | (17) |
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160 | (2) |
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6.3.2 Manipulators and x-y stages |
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162 | (2) |
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164 | (3) |
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6.3.4 Rotating micromotors |
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167 | (6) |
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6.3.5 Resonators and sensors |
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173 | (4) |
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177 | (4) |
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7. Isotropic wet chemical etching of silicon |
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181 | (12) |
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7.1 Etchants and etching diagrams |
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181 | (2) |
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7.2 Diffusion and stirring |
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183 | (1) |
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183 | (1) |
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183 | (8) |
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183 | (1) |
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7.4.2 Electrochemical etching mechanism |
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183 | (2) |
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7.4.3 Geometry control of etched structures |
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185 | (2) |
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7.4.4 Low-doped selective anodic HF etching |
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187 | (4) |
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191 | (2) |
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8. Introduction into dry plasma etching in microtechnology |
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193 | (7) |
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193 | (1) |
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194 | (3) |
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197 | (1) |
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198 | (1) |
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199 | (1) |
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200 | (6) |
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201 | (1) |
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201 | (1) |
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201 | (1) |
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9.2.2 Photoresist-assisted releasing |
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202 | (1) |
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9.2.3 Surface modification |
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202 | (1) |
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202 | (3) |
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9.3.1 Photon beam etching |
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202 | (1) |
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9.3.2 Neutral (beam) etching |
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203 | (1) |
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204 | (1) |
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205 | (1) |
10. What is plasma etching? |
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206 | (62) |
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10.1 Principle of plasma etching |
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209 | (3) |
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212 | (1) |
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10.2.1 Particle velocity, mean kinetic energy, and temperature |
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213 | (3) |
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10.2.2 Pressure, flux, and rate of effusion |
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216 | (1) |
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217 | (1) |
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10.2.4 Probability of collision and mean free path |
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218 | (2) |
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10.2.5 Elastic collisions |
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220 | (1) |
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10.2.6 Inelastic collisions |
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220 | (4) |
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224 | (1) |
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224 | (2) |
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226 | (1) |
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10.2.10 Plasma oscillations |
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226 | (1) |
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10.2.11 Plasma-to-floating potential |
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226 | (2) |
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228 | (4) |
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232 | (32) |
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10.3.1 Thermodynamic language |
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233 | (3) |
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10.3.2 Reversible thermodynamics |
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236 | (22) |
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10.3.3 Steady state thermodynamics |
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258 | (6) |
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10.4 Electrical equivalent circuit |
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264 | (3) |
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265 | (1) |
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10.4.2 Rf power supply and matching unit |
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265 | (1) |
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10.4.3 VSWR measuring unit |
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265 | (1) |
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10.4.4 Self-bias potential |
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266 | (1) |
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267 | (1) |
11. Plasma system configurations |
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268 | (12) |
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269 | (1) |
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269 | (1) |
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11.3 Electrode arrangement |
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270 | (1) |
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11.4 Load capacity and technique |
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271 | (1) |
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11.5 Plasma-sample distance |
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271 | (5) |
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11.5.1 Contact plasma etching |
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272 | (2) |
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11.5.2 Remote plasma etching |
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274 | (2) |
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276 | (1) |
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11.7 Type of etching species |
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276 | (3) |
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11.7.1 Radical etching (RE) or plasma etching (PE) |
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277 | (1) |
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11.7.2 Ion beam assisted radical etching (IBARE) or reactive ion etching (RIE) |
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277 | (2) |
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279 | (1) |
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279 | (1) |
12. Contact plasma etching |
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280 | (34) |
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12.1 Etch directionality in IBARE |
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280 | (2) |
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280 | (1) |
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12.1.2 Ion-inhibitor IBARE |
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281 | (1) |
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12.2 Pure plasma chemistries |
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282 | (2) |
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282 | (1) |
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282 | (1) |
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283 | (1) |
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283 | (1) |
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284 | (1) |
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12.3 Mixed plasma chemistries |
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284 | (4) |
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284 | (1) |
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284 | (4) |
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12.4 Multistep plasma chemistries |
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288 | (1) |
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12.5 Plasma parameters/influences |
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288 | (4) |
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288 | (2) |
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290 | (1) |
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290 | (1) |
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12.5.4 Reactor cleanliness |
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291 | (1) |
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291 | (1) |
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12.6 Mask materials/influences |
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292 | (4) |
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292 | (1) |
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293 | (1) |
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12.6.3 Catalytic reactions |
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293 | (1) |
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293 | (1) |
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294 | (1) |
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295 | (1) |
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295 | (1) |
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12.7 Problems and solutions |
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296 | (3) |
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296 | (1) |
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296 | (1) |
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297 | (2) |
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299 | (1) |
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299 | (9) |
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12.8.1 Fundamental models |
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300 | (1) |
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12.8.2 Design-of-experiment models |
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300 | (3) |
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12.8.3 Black surface methodology |
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303 | (5) |
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12.9 End point detection and plasma diagnostics |
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308 | (1) |
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12.9.1 Laser interferometry/reflectance and ellipsometry |
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308 | (1) |
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308 | (1) |
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309 | (1) |
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309 | (3) |
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12.10.1 Magnetron ion etching (MIE) |
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309 | (1) |
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12.10.2 Electron cyclotron resonance (ECR) |
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310 | (1) |
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12.10.3 Inductively coupled plasma (ICP) |
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310 | (1) |
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310 | (1) |
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12.10.5 Cryogenic cooling |
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311 | (1) |
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311 | (1) |
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312 | (1) |
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312 | (2) |
13. Remote plasma etching |
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314 | (17) |
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13.1 Review of vacuum etching |
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314 | (2) |
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316 | (1) |
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316 | (1) |
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316 | (1) |
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13.2.3 The substrate holder |
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317 | (1) |
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317 | (1) |
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13.3 Review of thermally assisted ion beam etching |
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317 | (1) |
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317 | (5) |
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318 | (1) |
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319 | (1) |
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320 | (1) |
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320 | (2) |
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322 | (2) |
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324 | (1) |
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13.7 Results and applications |
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325 | (4) |
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329 | (2) |
14. High aspect ratio trench etching |
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331 | (51) |
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14.1 Qualitative analysis |
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332 | (6) |
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333 | (1) |
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14.1.2 Equipment parameters |
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333 | (1) |
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14.1.3 Plasma characteristics |
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333 | (3) |
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14.1.4 Trench-forming mechanisms |
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336 | (2) |
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338 | (1) |
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14.2 Equipment and experimental |
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338 | (1) |
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338 | (1) |
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338 | (1) |
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339 | (1) |
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339 | (6) |
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339 | (1) |
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340 | (1) |
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341 | (1) |
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14.3.4 RIE lag due to ions |
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341 | (1) |
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14.3.5 RIE lag due to radical depletion or reflection |
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342 | (1) |
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343 | (2) |
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345 | (1) |
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14.4 Quantitative analysis of RIE lag |
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345 | (32) |
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14.4.1 Problem description |
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347 | (1) |
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14.4.2 Ion beam assisted radical etching |
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347 | (3) |
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350 | (1) |
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14.4.4 Inhibitor depletion in a trench |
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351 | (1) |
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14.4.5 Radical depletion in a trench |
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352 | (4) |
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14.4.6 Ion depletion in a trench |
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356 | (13) |
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14.4.7 Ion/solid interactions |
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369 | (1) |
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370 | (7) |
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377 | (3) |
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380 | (2) |
15. Moulding of microstructures |
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382 | (6) |
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383 | (1) |
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383 | (1) |
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384 | (1) |
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15.4 Dry etching with photoresist as a mask |
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385 | (2) |
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387 | (1) |
16. Fabrication of movable microstructures |
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388 | (11) |
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388 | (1) |
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389 | (1) |
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390 | (6) |
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391 | (1) |
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392 | (2) |
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394 | (1) |
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395 | (1) |
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396 | (3) |
Index |
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399 | |