Advanced Power Rectifer Concepts
by Baliga, B. JayantFormat: Hardcover
Pub. Date: 2009-05-15
Publisher(s): Springer Verlag
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Summary
During the last decade, many new concepts have been proposed for improving the performance of power rectifiers and transistors. The results of this research are dispersed in the technical literature among journal articles and abstracts of conferences. Consequently, the information is not readily available to researchers and practicing engineers in the power device community. There is no cohesive treatment of the ideas to provide an assessment of the relative merits of the ideas.Advanced Power Rectifier Concepts provides an in-depth treatment of the physics of operation of advanced power rectifiers. Analytical models for explaining the operation of all the advanced power rectifier devices will be developed. The results off numerical simulations will be provided to provide additional insight into the device physics and validate the analytical models. The results of two-dimensional simulations will be provided to corroborate the analytical models and provide greater insight into the device operation.
Table of Contents
| Preface | p. vii |
| Introduction | p. 1 |
| Ideal Power Switching Waveforms | p. 2 |
| Ideal and Typical Power Rectifier Characteristics | p. 3 |
| Unipolar Power Rectifiers | p. 4 |
| Bipolar Power Rectifiers | p. 8 |
| Typical Power Rectifier Applications | p. 10 |
| DC-DC Buck Converter | p. 10 |
| Variable-Frequency Motor Drive | p. 11 |
| Summary | p. 13 |
| References | p. 13 |
| Schottky Rectifiers | p. 15 |
| Power Schottky Rectifier Structure | p. 16 |
| Forward Conduction | p. 17 |
| Reverse Blocking | p. 22 |
| Schottky Barrier Lowering | p. 23 |
| Pre-Breakdown Avalanche Multiplication | p. 25 |
| Silicon Carbide Schottky Rectifiers | p. 26 |
| Summary | p. 27 |
| References | p. 28 |
| Junction Barrier Controlled Schottky Rectifiers | p. 29 |
| Junction Barrier Schottky (JBS) Rectifier Structure | p. 30 |
| Forward Conduction Models | p. 32 |
| Silicon JBS Rectifier: Forward Conduction Model A | p. 33 |
| Silicon JBS Rectifier: Forward Conduction Model B | p. 35 |
| Silicon JBS Rectifier: Forward Conduction Model C | p. 37 |
| Silicon JBS Rectifier: Example | p. 39 |
| Silicon Carbide JBS Rectifier: Forward Conduction Model | p. 45 |
| JBS Rectifier Structure: Reverse Leakage Model | p. 50 |
| Silicon JBS Rectifier: Reverse Leakage Model | p. 50 |
| Silicon Carbide JBS Rectifier: Reverse Leakage Model | p. 59 |
| Trade-Off Curve | p. 71 |
| Summary | p. 73 |
| References | p. 74 |
| Trench Schottky Barrier Controlled Schottky Rectifiers | p. 75 |
| Trench Schottky Barrier controlled Schottky (TSBS) Rectifier Structure | p. 76 |
| Forward Conduction Model | p. 78 |
| Silicon TSBS Rectifier: Example | p. 81 |
| Silicon Carbide TSBS Rectifier: Example | p. 88 |
| TSBS Rectifier Structure: Reverse Leakage Model | p. 93 |
| Silicon TSBS Rectifier: Reverse Leakage Model | p. 93 |
| Silicon Carbide TSBS Rectifier: Reverse Leakage Model | p. 103 |
| Trade-Off Curve | p. 112 |
| Summary | p. 114 |
| References | p. 115 |
| Trench MOS Barrier Controlled Schottky Rectifiers | p. 117 |
| Trench MOS Barrier controlled Schottky (TMBS) Rectifier Structure | p. 118 |
| Forward Conduction Model | p. 122 |
| Silicon TMBS Rectifier: Example | p. 124 |
| Silicon Carbide TMBS Rectifier: Example | p. 129 |
| TMBS Rectifier Structure: Reverse Leakage Model | p. 133 |
| Silicon TMBS Rectifier: Reverse Leakage Model | p. 133 |
| Silicon Carbide TMBS Rectifier: Reverse Leakage Model | p. 145 |
| Trade-Off Curve | p. 148 |
| Summary | p. 150 |
| References | p. 150 |
| P-i-N Rectifiers | p. 151 |
| One-Dimensional Structure | p. 152 |
| High Level Injection Current | p. 152 |
| Injection into the End-Regions | p. 161 |
| Forward Conduction Characteristics | p. 163 |
| Silicon Carbide P-i-N Rectifiers | p. 168 |
| Reverse Blocking | p. 170 |
| Switching Performance | p. 172 |
| P-i-N Rectifier Trade-Off Curves | p. 190 |
| Summary | p. 192 |
| References | p. 193 |
| MPS Rectifiers | p. 195 |
| Device Physics | p. 197 |
| Low Forward Bias Conditions | p. 198 |
| High Level Injection Conditions | p. 201 |
| On-State Voltage Drop | p. 206 |
| Forward Conduction Characteristics | p. 211 |
| Injection into the N+ End-Region | p. 213 |
| Silicon Carbide MPS Rectifiers | p. 229 |
| Reverse Blocking | p. 245 |
| Silicon MPS Rectifier: Reverse Leakage Model | p. 246 |
| Silicon Carbide MPS Rectifier: Reverse Leakage Model | p. 252 |
| Switching Performance | p. 260 |
| Stored Charge | p. 260 |
| Reverse Recovery | p. 261 |
| Silicon Carbide MPS Rectifier: Reverse Recovery | p. 276 |
| MPS Rectifier Trade-Off Curves | p. 283 |
| Summary | p. 285 |
| References | p. 285 |
| SSD Rectifiers | p. 287 |
| Device Physics | p. 288 |
| High Level Injection Conditions | p. 289 |
| On-State Voltage Drop | p. 294 |
| Forward Conduction Characteristics | p. 298 |
| Injection into the N+ End-Region | p. 299 |
| Reverse Blocking | p. 309 |
| Switching Performance | p. 318 |
| Stored Charge | p. 318 |
| Reverse Recovery | p. 320 |
| SSD Rectifier Trade-Off Curves | p. 324 |
| Silicon Carbide SSD Rectifiers | p. 325 |
| Summary | p. 327 |
| References | p. 328 |
| Synopsis | p. 329 |
| DC-to-DC Buck Converter Application | p. 331 |
| Typical Motor Control Application | p. 334 |
| Summary | p. 344 |
| References | p. 344 |
| Author's Biography | p. 345 |
| Index | p. 349 |
| Table of Contents provided by Ingram. All Rights Reserved. |
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