Fundamentals of High-frequency Cmos Analog Integrated Circuits

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Edition: 1st
Format: Hardcover
Pub. Date: 2009-06-30
Publisher(s): Cambridge University Press
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Summary

With a design-centric approach, this textbook bridges the gap between fundamental analog electronic circuit textbooks and more advanced RF IC design texts. The major issues that must be taken into account when combining analog and digital circuit building blocks are covered, together with the key criteria and parameters that are used to describe system-level performance. Simple circuit models enable a robust understanding of high-frequency design fundamentals, and SPICE simulations are used to check results and fine-tune the design. With solved design examples to guide the reader through the decision process that accompanies each design task, this is an ideal textbook for senior undergraduate and graduate courses in RF CMOS circuits, RF circuit design, and high-frequency analog circuit design. Analog integrated circuit designers and RF circuit designers in industry who need help making design choices will also find this a practical and valuable reference.

Author Biography

Duran Leblebici is Professor Emeritus of Electrical and Electronics Engineering at Istanbul Technical University (ITU). He has been teaching a range of undergraduate and graduate courses, from device electronics and fabrication technologies to integrated electronic circuits and RF IC design, for over 40 years. He is the author of three textbooks in the field of electronics. Yusuf Leblebici is Director and Chair Professor of the Microelectronic Systems Laboratory at the Swiss Federal Institute of Technology in Lausanne (EPFL). He has previously worked as a faculty member at the University of Illinois at Urbana-Champaign, at Istanbul Technical University, and at Worcester Polytechnic Institute (WPI), where he established and directed the VLSI Design Laboratory, and he has also served as a project director at the New England Center for Analog and Mixed-Signal IC Design. He is a co-author of more than 150 scientific articles and three textbooks.

Table of Contents

Prefacep. xi
Components of analog CMOS ICsp. 1
MOS transistorsp. 1
Current-voltage relations of MOS transistorsp. 3
The basic current-voltage relations without velocity saturationp. 4
Current-voltage relations under velocity saturationp. 11
The sub-threshold regimep. 15
Determination of model parameters and related secondary effectsp. 19
Mobilityp. 20
Gate capacitancep. 20
Threshold voltagep. 21
Channel length modulation factorp. 23
Gate length (L) and gate width (W)p. 24
Parasitics of MOS transistorsp. 25
Parasitic capacitancesp. 26
The high-frequency figure of meritp. 30
The parasitic resistancesp. 31
Passive on-chip componentsp. 36
On-chip resistorsp. 36
On-chip capacitorsp. 38
Passive on-chip capacitorsp. 38
Varactorsp. 40
On-chip inductorsp. 43
Basic MOS amplifiers: DC and low-frequency behaviorp. 49
Common source (grounded source) amplifierp. 49
Biasingp. 53
The small-signal equivalent circuitp. 54
Active transistor loaded MOS amplifier (CMOS inverter as analog amplifier)p. 63
Common-gate (grounded-gate) amplifierp. 68
Common-drain amplifier (source follower)p. 70
The "long tailed pair"p. 75
The large signal behavior of the long tailed pairp. 84
Common-model feedbackp. 88
High-frequency behavior of basic amplifiersp. 95
High-frequency behavior of a common-source amplifierp. 97
The R-C load casep. 99
The source follower amplifier at radio frequenciesp. 103
The common-gate amplifier at high frequenciesp. 110
The "cascode" amplifierp. 114
The CMOS inverter as a transimpedance amplifierp. 118
MOS transistor with source degeneration at high frequenciesp. 126
High-frequency behavior of differential amplifiersp. 129
The R-C loaded long tailed pairp. 129
The fully differential, current-mirror loaded amplifierp. 132
Frequency response of a single-ended output long tailed pairp. 136
On the input and output admittances of the long tailed pairp. 141
Gain enhancement techniques for high-frequency amplifiersp. 143
"Additive" approach: distributed amplifiersp. 144
Cascading strategies for basic gain stagesp. 146
An example: the "Cherry-Hooper" amplifierp. 148
Frequency-selective RF circuitsp. 155
Resonance circuitsp. 156
The parallel resonance circuitp. 156
The quality factor of a resonance circuitp. 160
The quality factor from a different point of viewp. 163
The "Q enhancement"p. 164
Bandwidth of a parallel resonance circuitp. 168
Currents of L and C branches of a parallel resonance circuitp. 169
The series resonance circuitp. 170
Component voltages in a series resonance circuitp. 172
Tuned amplifiersp. 172
The common-source tuned amplifierp. 173
The turned cascode amplifierp. 179
Cascaded tuned stages and the staggered tuningp. 181
Amplifiers loaded with coupled resonance circuitsp. 189
Magnetic couplingp. 189
Capacitive couplingp. 194
The gyrator: a valuable tool to realize high-value on-chip inductancesp. 194
Parasitics of a non-ideal gyratorp. 197
Dynamic range of a gyrator-based inductorp. 201
The low-noise amplifier (LNA)p. 202
Input impedance matchingp. 203
Basic circuits suitable for LNAsp. 207
Noise in amplifiersp. 210
Thermal noise of a resistorp. 212
Thermal noise of a MOS transistorp. 213
Noise in LNAsp. 224
The differential LNAp. 234
L-C oscillatorsp. 237
The negative resistance approach to L-C oscillatorsp. 237
The feedback approach to L-C oscillatorsp. 245
Frequency stability of L-C oscillatorsp. 249
Crystal oscillatorsp. 251
The phase-lock techniquep. 253
Phase noise in oscillatorsp. 255
Analog-digital interface and system-level design considerationsp. 259
General observationsp. 259
Discrete-time samplingp. 263
Influence of sampling clock jitterp. 265
Quantization noisep. 267
Converter specificationsp. 268
Static specificationsp. 269
Frequency-domain dynamic specificationsp. 273
Additional observations on noise in high-frequency ICsp. 275
Mobility degradation due to the transversal fieldp. 277
Characteristic curves and parameters of AMS 0.35 micron NMOS and PMOS transistorsp. 279
BSIM3-v3 parameters of AMS 0.35 micron NMOS and PMOS transistorsp. 281
Current sources and current mirrorsp. 287
DC current sourcesp. 287
Frequency characteristics of basic current mirrorsp. 289
Frequency characteristics for normal saturationp. 291
Frequency characteristics under velocity saturationp. 292
Referencesp. 293
Indexp. 297
Table of Contents provided by Ingram. All Rights Reserved.

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