
Fundamentals of High-frequency Cmos Analog Integrated Circuits
by Duran Leblebici , Yusuf Leblebici-
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Summary
Author Biography
Table of Contents
Preface | p. xi |
Components of analog CMOS ICs | p. 1 |
MOS transistors | p. 1 |
Current-voltage relations of MOS transistors | p. 3 |
The basic current-voltage relations without velocity saturation | p. 4 |
Current-voltage relations under velocity saturation | p. 11 |
The sub-threshold regime | p. 15 |
Determination of model parameters and related secondary effects | p. 19 |
Mobility | p. 20 |
Gate capacitance | p. 20 |
Threshold voltage | p. 21 |
Channel length modulation factor | p. 23 |
Gate length (L) and gate width (W) | p. 24 |
Parasitics of MOS transistors | p. 25 |
Parasitic capacitances | p. 26 |
The high-frequency figure of merit | p. 30 |
The parasitic resistances | p. 31 |
Passive on-chip components | p. 36 |
On-chip resistors | p. 36 |
On-chip capacitors | p. 38 |
Passive on-chip capacitors | p. 38 |
Varactors | p. 40 |
On-chip inductors | p. 43 |
Basic MOS amplifiers: DC and low-frequency behavior | p. 49 |
Common source (grounded source) amplifier | p. 49 |
Biasing | p. 53 |
The small-signal equivalent circuit | p. 54 |
Active transistor loaded MOS amplifier (CMOS inverter as analog amplifier) | p. 63 |
Common-gate (grounded-gate) amplifier | p. 68 |
Common-drain amplifier (source follower) | p. 70 |
The "long tailed pair" | p. 75 |
The large signal behavior of the long tailed pair | p. 84 |
Common-model feedback | p. 88 |
High-frequency behavior of basic amplifiers | p. 95 |
High-frequency behavior of a common-source amplifier | p. 97 |
The R-C load case | p. 99 |
The source follower amplifier at radio frequencies | p. 103 |
The common-gate amplifier at high frequencies | p. 110 |
The "cascode" amplifier | p. 114 |
The CMOS inverter as a transimpedance amplifier | p. 118 |
MOS transistor with source degeneration at high frequencies | p. 126 |
High-frequency behavior of differential amplifiers | p. 129 |
The R-C loaded long tailed pair | p. 129 |
The fully differential, current-mirror loaded amplifier | p. 132 |
Frequency response of a single-ended output long tailed pair | p. 136 |
On the input and output admittances of the long tailed pair | p. 141 |
Gain enhancement techniques for high-frequency amplifiers | p. 143 |
"Additive" approach: distributed amplifiers | p. 144 |
Cascading strategies for basic gain stages | p. 146 |
An example: the "Cherry-Hooper" amplifier | p. 148 |
Frequency-selective RF circuits | p. 155 |
Resonance circuits | p. 156 |
The parallel resonance circuit | p. 156 |
The quality factor of a resonance circuit | p. 160 |
The quality factor from a different point of view | p. 163 |
The "Q enhancement" | p. 164 |
Bandwidth of a parallel resonance circuit | p. 168 |
Currents of L and C branches of a parallel resonance circuit | p. 169 |
The series resonance circuit | p. 170 |
Component voltages in a series resonance circuit | p. 172 |
Tuned amplifiers | p. 172 |
The common-source tuned amplifier | p. 173 |
The turned cascode amplifier | p. 179 |
Cascaded tuned stages and the staggered tuning | p. 181 |
Amplifiers loaded with coupled resonance circuits | p. 189 |
Magnetic coupling | p. 189 |
Capacitive coupling | p. 194 |
The gyrator: a valuable tool to realize high-value on-chip inductances | p. 194 |
Parasitics of a non-ideal gyrator | p. 197 |
Dynamic range of a gyrator-based inductor | p. 201 |
The low-noise amplifier (LNA) | p. 202 |
Input impedance matching | p. 203 |
Basic circuits suitable for LNAs | p. 207 |
Noise in amplifiers | p. 210 |
Thermal noise of a resistor | p. 212 |
Thermal noise of a MOS transistor | p. 213 |
Noise in LNAs | p. 224 |
The differential LNA | p. 234 |
L-C oscillators | p. 237 |
The negative resistance approach to L-C oscillators | p. 237 |
The feedback approach to L-C oscillators | p. 245 |
Frequency stability of L-C oscillators | p. 249 |
Crystal oscillators | p. 251 |
The phase-lock technique | p. 253 |
Phase noise in oscillators | p. 255 |
Analog-digital interface and system-level design considerations | p. 259 |
General observations | p. 259 |
Discrete-time sampling | p. 263 |
Influence of sampling clock jitter | p. 265 |
Quantization noise | p. 267 |
Converter specifications | p. 268 |
Static specifications | p. 269 |
Frequency-domain dynamic specifications | p. 273 |
Additional observations on noise in high-frequency ICs | p. 275 |
Mobility degradation due to the transversal field | p. 277 |
Characteristic curves and parameters of AMS 0.35 micron NMOS and PMOS transistors | p. 279 |
BSIM3-v3 parameters of AMS 0.35 micron NMOS and PMOS transistors | p. 281 |
Current sources and current mirrors | p. 287 |
DC current sources | p. 287 |
Frequency characteristics of basic current mirrors | p. 289 |
Frequency characteristics for normal saturation | p. 291 |
Frequency characteristics under velocity saturation | p. 292 |
References | p. 293 |
Index | p. 297 |
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