Properties of Advanced Semiconductor Materials GaN, AIN, InN, BN, SiC, SiGe

by ; ;
Edition: 1st
Format: Hardcover
Pub. Date: 2001-02-21
Publisher(s): Wiley-Interscience
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Summary

Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.

Author Biography

Michael E. Levinshtein is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.

Sergey L. Rumyantsev is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.

Michael S. Shur is the editor of Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe, published by Wiley.

Table of Contents

Contributors xiii
Preface xv
Gallium Nitride (GaN)
1(30)
V. Bougrov
M. Levinshtein
S. Rumyantsev
A. Zubrilow
Basic Parameters at 300 K
1(2)
Band Structure and Carrier Concentration
3(6)
Temperature Dependences
4(2)
Dependence on Hydrostatic Pressure
6(1)
Band Discontinuities at Heterointerfaces
7(1)
Effective Masses
7(1)
Donors and Acceptors
8(1)
Electrical Properties
9(7)
Mobility and Hall Effect
9(3)
Two-Dimensional Electron Gas Mobility at AlGaN/GaN Interface
12(1)
Transport Properties in High Electric Field
13(2)
Impact Ionization
15(1)
Recombination Parameters
15(1)
Optical Properties
16(6)
Thermal Properties
22(2)
Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties
24(7)
References
28(3)
Aluminum Nitride (AIN)
31(18)
Yu. Goldberg
Basic Parameters at 300 K
31(2)
Band Structure and Carrier Concentration
33(4)
Temperature Dependences
33(1)
Dependences on Hydrostatic Pressure
34(1)
Band Discontinuities at Heterointerfaces
35(1)
Effective Masses
35(1)
Donors and Acceptors
36(1)
Electrical Properties
37(2)
Mobility and Hall Effect
37(1)
Recombination Parameters
38(1)
Optical Properties
39(2)
Thermal Properties
41(3)
Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties
44(5)
References
46(3)
Indium Nitride (InN)
49(18)
A. Zubrilov
Basic Parameters at 300 K
49(2)
Band Structure and Carrier Concentration
51(3)
Temperature Dependences
51(2)
Dependence on Hydrostatic Pressure
53(1)
Band Discontinuities at Heterointerfaces
53(1)
Effective Masses
53(1)
Donors and Acceptors
54(1)
Electrical Properties
54(4)
Mobility and Hall Effect
54(2)
Transport Properties in High Electric Field
56(1)
Impact Ionization
57(1)
Recombination Parameters
58(1)
Optical Properties
58(3)
Thermal Properties
61(2)
Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties
63(4)
References
65(2)
Boron Nitride (BN)
67(26)
S. Rumyantsev
M. Levinshtein
A.D. Jackson
S.N. Mohammad
G.L. Harris
M.G. Spencer
M.S. Shur
Basic Parameters at 300 K
68(2)
Band Structure and Carrier Concentration
70(5)
Dependence on Hydrostatic Pressure
72(1)
Effective Masses
73(2)
Donors and Acceptors
75(1)
Electrical Properties
75(1)
Optical Properties
76(4)
Thermal Properties
80(6)
Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties
86(7)
References
91(2)
Silicon Carbide (SiC)
93(56)
Yu. Goldberg
M. Levinshtein
S. Rumyantsev
Basic Parameters at 300 K
93(3)
Band Structure and Carrier Concentration
96(10)
Temperature Dependences
97(3)
Dependence on Hydrostatic Pressure
100(1)
Energy Gap Narrowing at High Doping Levels
101(1)
Effective Masses
102(2)
Donors and Acceptors
104(2)
Electrical Properties
106(16)
Mobility and Hall Effect
106(5)
Transport Properties in High Electric Field
111(3)
Impact Ionization
114(5)
Recombination Parameters
119(3)
Optical Properties
122(10)
Thermal Properties
132(6)
Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties
138(11)
References
143(6)
Silicon-Germanium (Si1-xGex)
149(40)
F. Schaffler
Basic Parameters in Unstrained Bulk Material at 300 K
151(3)
Band Structure and Carrier Concentration
154(14)
Temperature Dependences
157(3)
Dependence of Energy Gap on Hydrostatic Pressure
160(1)
Strain-Dependent Band Discontinuity
160(4)
Effective Masses
164(4)
Electrical Properties
168(5)
Mobility and Hall Effect
168(1)
Two-Dimensional Electron Gas
169(2)
Two-Dimensional Hole Gas
171(2)
Optical Properties
173(3)
Thermal Properties
176(3)
Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties
179(10)
References
186(3)
Appendixes 189(4)
1. Basic Physical Constants
189(1)
2. Periodic Table of the Elements
190(1)
3. Rectangular Coordinates for Hexagonal Crystal
191(1)
4. The First Brillouin Zone for Wurtzite Crystal
191(1)
5. Zinc Blende Structure
192(1)
6. The First Brillouin Zone for Zinc Blende Crystal
192(1)
Additional References 193

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